TPCP8105 Datasheet, Toshiba Semiconductor

(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhance.

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* Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features (1) (2) (3) (4) Sm.